BAS45AL,115 datasheet

Маркировка

BAS45AL,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BAS45AL,115 Capacitance @ Vr, F: 4pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 1nA @ 125V Forward Continuous Current: 625 mA Forward Voltage Drop: 80 mV ID_COMPONENTS: 1942110 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 4 A Maximum Diode Capacitance: 4 pF Maximum Operating Temperature: + 175 C Maximum Power Dissipation: 400 mW Maximum Reverse Leakage Current: 0.001 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 175 C Package / Case: LL-34, LLDS, MiniMELF, SOD80C Peak Reverse Voltage: 125 V Product: Switching Diodes Recovery Time: 1500 ns Reverse Recovery Time (trr): 1.5?µs Series: - Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Dc Reverse (vr) (max): 125V Voltage - Forward (vf) (max) @ If: 1V @ 100mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 2500 Part # Aliases: BAS45AL T/R Other Names: 934031250115::BAS45AL T/R::BAS45AL T/R
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